Simulation of saturation current in In1-xGaxSb based solar cell
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Date
Publisher
© 2015 Institute of Electrical and Electronics Engineers Inc.
Citation
Hassan, A., Mondol, R. K., & Jafar, I. B. (2015). Simulation of saturation current in In1-xGaxSb based solar cell. Paper presented at the 2015 International Conference on Green Energy and Technology, ICGET 2015, doi:10.1109/ICGET.2015.7315122
Abstract
After the golden era of silicon, nowadays compound semiconductors from III-V group is extensively studied to observe their application in electronic as well as in other field. Solar cell which is providing alternative source in our industries, houses and laboratories. Researchers are now trying to find out new features by using these inorganic materials based solar cell which can easily be paved the way of better controlling and maximizing the efficiency. In previous literature, InSb and GaSb based solar cell has already been studied. In this paper, In1-xGaxSb based solar cell is analyzed through their electronic responses. Here, we will observe the bandgap energy response for different proportion of gallium, temperature dependent energy, temperature dependent saturation current which will help in predicting a good level of solar efficiency.
Description
This conference paper was presented in the 3rd International Conference on Green Energy and Technology, ICGET 2015; University of Dhaka Dhaka; Bangladesh; 11 September 2015 through 12 September 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICGET.2015.7315122
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Conference Paper