Conference Paper

Permanent URI for this collectionhttps://hdl.handle.net/10361/6955

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Hardware architecture design of face recognition system based on FPGA
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Mondol, Raktim Kumar; Khan, Muhammadimran; Mahbubul, Hye, A. K.; Hassan, Asif S.; Department of Electrical and Electronic Engineering
A novel hardware architecture for face-recognition system has been proposed in this paper. In order to make the system cost effective a simple yet efficient algorithm of face-recognition system has been used. We have designed, implemented and verified the algorithm in a cyclone III Field Programmable Gate Array (FPGA) chip. Altera DE0 development board which contains a cyclone III chip on it has been used for debugging purpose. We have also ensured for low power consumption such that the chip could be used universally in a wide range of security systems. To develop a simple yet efficient face recognition algorithm (such as PCA, FFT etc.) on digital hardware, we have researched on various face recognition algorithms using MATLAB codes and studied their detection efficiency under various posture and background and also the complexity of the algorithm. To save hardware resource and at the same time to obtain an acceptable level of recognition we have chosen to use Fast Fourier Transform (FFT).
Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Hasan, Rifat; Hassan, Asif S.; Abedin, Minhaz Ibna; Mondol, Raktim Kumar; Department of Electrical and Electronic Engineering
Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.
Simulation of carrier mobility through Graphene Nanoribbon based DNA sensor
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Hasan, Rifat; Nandy, Turja; Abedin, Minhaz Ibna; Hassan, Asif S.; Mondol, Raktim Kumar; Department of Electrical and Electronic Engineering
Graphene Nanoribbons (GNRs), now-a-days, are used in detecting Deoxyribonucleic Acid (DNA) which is one of the breakthroughs in modern nanobiomaterial and biomedical applications. The conductance is calculated by transferring the electron from DNA to Graphene Nanoribbon sample. The conductance is the basic parameter of calculating carrier properties from DNA to GNR pathway. One of the carrier properties is mobility upon which hereditary information can be observed for different patch of helix. In this paper, firstly we will observe conductance for DNA-GNR structure by controlling the gate voltage. Then we will measure the variation of mean free path for different conductance of this structure. From this observation, we will investigate the resistivity and calculate the carrier mobility through DNA to GNR sample.
Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Mondol, Raktim Kumar; Hassan, Asif S.; Hasan, Rifat; Department of Electrical and Electronic Engineering
Armchair Graphene nanoribbons(A-GNRs) are now widely used in nanoscale transistor because of its semiconducting behavior and fast switching speed. The most important parameter which impedes carrier movement through the channel is 'capacitance' after its sustainable value. Earlier classical capacitance was assumed as only one of the capacitance in nanoscale transistor. But when the device is operated by a source; classical capacitance goes in vain for overall observing the carrier statistics. Here another capacitance must be considered which 'Quantum capacitance' is. Edge effect which is caused during fabrication for the deviation of true structure. In previous literature, it is quantum capacitance calculated by considering edge effect only.But another phenomena is also appeared when GNR is subjected to a considerable strain in fabrication. In this paper we will calculate bandgap, energy , quantum capacitance and gate delay by considering strained A-GNR for corresponding source voltage.
Simulation of saturation current in In1-xGaxSb based solar cell
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Hassan, Asif S.; Mondol, Raktim Kumar; Jafar, Imran Bin; Department of Electrical and Electronic Engineering
After the golden era of silicon, nowadays compound semiconductors from III-V group is extensively studied to observe their application in electronic as well as in other field. Solar cell which is providing alternative source in our industries, houses and laboratories. Researchers are now trying to find out new features by using these inorganic materials based solar cell which can easily be paved the way of better controlling and maximizing the efficiency. In previous literature, InSb and GaSb based solar cell has already been studied. In this paper, In1-xGaxSb based solar cell is analyzed through their electronic responses. Here, we will observe the bandgap energy response for different proportion of gallium, temperature dependent energy, temperature dependent saturation current which will help in predicting a good level of solar efficiency.

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