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I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

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Files

13121044 & 13121126_EEE.pdf (852.54 KB)

Date

8/17/2016

Publisher

BRAC University

Authors

Full item page

URI

http://hdl.handle.net/10361/6425

Citation

Abstract

In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).

Keywords

I-V Characteristics, Negative Differential Resistance (NDR), Resonant Tunneling Diodes (RTD)

Description

Cataloged from PDF version of thesis report.
Includes bibliographical references (page 46-47).
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Publisher Link

Department

Department of Electrical and Electronic Engineering

Type

Thesis

Collections

Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)