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I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

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dc.contributor.advisorSaha, Atanu Kumar
dc.contributor.authorAhmed, Saber
dc.contributor.authorSobhan, Rifat Binte
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2016-09-20T06:59:09Z
dc.date.available2016-09-20T06:59:09Z
dc.date.copyright2016
dc.date.issued8/17/2016
dc.descriptionCataloged from PDF version of thesis report.
dc.descriptionIncludes bibliographical references (page 46-47).
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.en_US
dc.description.abstractIn this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).en_US
dc.description.degreeB. Electrical and Electronic Engineering
dc.description.statementofresponsibilitySaber Ahmed
dc.description.statementofresponsibilityRifat Binte Sobhan
dc.format.extent47 pages
dc.identifier.otherID 13121044
dc.identifier.otherID 13121126
dc.identifier.urihttp://hdl.handle.net/10361/6425
dc.language.isoenen_US
dc.publisherBRAC Universityen_US
dc.rightsBRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subjectI-V Characteristicsen_US
dc.subjectNegative Differential Resistance (NDR)en_US
dc.subjectResonant Tunneling Diodes (RTD)en_US
dc.titleI-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diodeen_US
dc.typeThesisen_US

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Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)